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gan wideband 90 w pulsed transistor in plastic package dc - 3.5 ghz rev. v3 magx - 000035 - 09000p 1 1 1 m/a - com technology solutions inc. (macom) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. visit www.macomtech.com for additional data sheets and product information. for further information and support please visit: https://www.macomtech.com/content/customersupport features ? gan on sic d - mode transistor technology ? unmatched, ideal for pulsed applications ? 50 v typical bias, class ab ? common - source configuration ? thermally - enhanced 3 x 6 mm 14 - lead dfn ? mttf = 600 years (t j < 200c) ? halogen - free green mold compound ? rohs* compliant and 260c reflow compatible ? msl - 1 description the magx - 000035 - 09000p is a gan on sic unmatched power device offering the widest rf frequency capability, most reliable high voltage operation, lowest overall power transistor size, cost and weight in a true smt plastic - packaging technology. use of an internal stress buffer technology allows reliable operation at junction temperatures up to 200c. the small package size and excellent rf performance make it an ideal replacement for costly flanged or metal - backed module components. pin no. function pin no. function 1 v gg /rf in 8 v dd /rf out 2 v gg /rf in 9 v dd /rf out 3 v gg /rf in 10 v dd /rf out 4 no connection 11 no connection 5 v gg /rf in 12 v dd /rf out 6 v gg /rf in 13 v dd /rf out 7 v gg /rf in 14 v dd /rf out 15 paddle 4 part number package magx - 000035 - 09000p bulk packaging magx - 000035 - 0900tp 100 piece reel magx - 000035 - pb3ppr sample board * restrictions on hazardous substances, european union directive 2002/95/ec. functional schematic pin configuration 3 ordering information 1,2 1. reference application note m513 for reel size information. 2. when ordering sample evaluation boards, choose a standard frequency range indicated on page 4/5 or specify a desired custom range. custom requests may increase lead times. 3. macom recommends connecting unused package pins to ground. 4. the exposed pad centered on the package bottom must be connected to rf and dc ground. nc nc 1 2 3 4 5 6 7 14 13 12 11 10 9 8 15 g g g d 15 g g g d
gan wideband 90 w pulsed transistor in plastic package dc - 3.5 ghz rev. v3 magx - 000035 - 09000p 2 2 2 m/a - com technology solutions inc. (macom) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. visit www.macomtech.com for additional data sheets and product information. for further information and support please visit: https://www.macomtech.com/content/customersupport parameter test conditions symbol min. typ. max. units dc characteristics drain - source leakage current v gs = - 8 v, v ds = 175 v i ds - - 6.0 ma gate threshold voltage v ds = 5 v, i d = 6 ma v gs (th) - 5 - 3 - 2 v forward transconductance v ds = 5 v, i d = 3000 ma g m 1.1 - - s dynamic characteristics input capacitance v ds = 0 v, v gs = - 8 v, f = 1 mhz c iss - 22 - pf output capacitance v ds = 50 v, v gs = - 8 v, f = 1 mhz c oss - 9.8 - pf reverse transfer capacitance v ds = 50 v, v gs = - 8 v, f = 1 mhz c rss - 0.9 - pf electrical characteristics: t a = 25c electrical specifications: freq. = 1.6 ghz, t a = 25c, v dd = +50 v, z 0 = 50 parameter test conditions symbol min. typ. max. units rf functional tests cw output power (p2.5 db) v dd = 28 v, i dq = 200 ma p out - 14 - w pulsed output power (p2.5 db) 100 s and 10% duty cycle v dd = 50 v, i dq = 200 ma p out 75 95 - w pulsed power gain (p2.5 db) v dd = 50 v, i dq = 200 ma g p 16 17.5 - db pulsed drain efficiency (p2.5 db) v dd = 50 v, i dq = 200 ma d 55 65 - % load mismatch stability (p2.5 db) v dd = 50 v, i dq = 200 ma vswr - s - 5:1 - - load mismatch tolerance (p2.5 db) v dd = 50 v, i dq = 200 ma vswr - t - 10:1 - - typical performance 5 : v dd = 50 v, i dq = 200 ma, t a = 25c parameter 30 mhz 1 ghz 2.5 ghz 3.5 ghz units gain 25 21 15 13 db saturated power (p sat ) 100 98 90 85 w power gain at p sat 22 20 15 11 db pae @ p sat 75 65 55 52 % 5. typical rf performance measured in m/a - com technology solutions rf evaluation boards. see recommended tuning solutions on pages 4 and 5.
gan wideband 90 w pulsed transistor in plastic package dc - 3.5 ghz rev. v3 magx - 000035 - 09000p 3 3 3 m/a - com technology solutions inc. (macom) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. visit www.macomtech.com for additional data sheets and product information. for further information and support please visit: https://www.macomtech.com/content/customersupport parameter absolute max. input power p out - g p + 2.5 dbm drain supply voltage, v dd +65 v gate supply voltage, v gg - 8 v to 0 v supply current, i dd 4500 ma power dissipation, cw @ 85oc 27 w power dissipation (p avg ), pulsed @ 85 c 85 w junction temperature 11 200c operating temperature - 40c to +95c storage temperature - 65c to +150c absolute maximum ratings 6,7,8,9,10 6. exceeding any one or combination of these limits may cause permanent damage to this device. 7. m/a - com technology solutions does not recommend sustained operation near these survivability limits. 8. for saturated performance it is recommended that the sum of (3 * v dd + abs (v gg )) < 175 v. 9. cw operation at v dd voltages above 28 v is not recommended. 10. operating at nominal conditions with t j 200c will ensure mttf > 1 x 10 6 hours. junction temperature directly affects device mttf and should be kept as low as possible to maximize lifetime. 11. junction temperature (t j ) = t c + ? jc * ((v * i) - (p out - p in )) typical cw thermal resistance ( ? jc ) = 5.69c/w a) for t c = 79c, t j = 200c @ 28 v, 1224 ma, p out = 15 w, p in = 0.25 w typical transient thermal resistances: b) 300 s pulse, 10% duty cycle, ? jc = 0.96c/w for t c = 79c, t j = 131c @ 50 v, 2500 ma, p out = 74 w, p in = 2 w c) 1 ms pulse, 10% duty cycle, ? jc = 1.38c/w for t c = 80c, t j = 173c @ 50 v, 2780 ma, p out = 74 w, p in = 2 w d) 1 ms pulse, 10% duty cycle, ? jc = 1.35c/w for t c = 80c, t j = 173c @ 50 v, 3160 ma, p out = 93 w, p in = 4 w
gan wideband 90 w pulsed transistor in plastic package dc - 3.5 ghz rev. v3 magx - 000035 - 09000p 4 4 4 m/a - com technology solutions inc. (macom) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. visit www.macomtech.com for additional data sheets and product information. for further information and support please visit: https://www.macomtech.com/content/customersupport parts list (n/a = not applicable for this tuning solution) parts measured on evaluation board (8 - mils thick ro4003c). electrical and thermal ground is provided using copper - filled via hole array (not pictured), and evaluation board is mounted to a metal plate. matching is provided using lumped elements as shown at left. recommended tuning solutions for 2 frequency ranges are detailed in the parts list below. evaluation board details and recommended tuning solutions turning the device on 1. set v g to the pinch - off (v p ), typically - 5 v. 2. turn on v d to nominal voltage (50 v). 3. increase v gs until the i ds current is reached. 4. apply rf power to desired level. turning the device off 1. turn the rf power off. 2. decrease v g down to v p. 3. decrease v d down to 0 v. 4. turn off v g . bias sequencing part frequency = 1.2 - 1.4 ghz frequency = 1.6 ghz c1 0505, 56 pf, 5%, 250 v, atc 0505, 36 pf, 5%, 250 v, atc c2 0603, 4.7 pf, 0.1 pf, 250 v, atc n/a c3 0603, 10 pf, 5%, 250 v, atc n/a c4 0505, 15 pf, 5%, 250 v, atc n/a c5 n/a 0505, 8.2 pf, 0.1 pf, 250 v, atc c6 n/a 0505, 100 pf, 10%, 200 v, atc c7 0805, 1000 pf, 100 v, 5%, avx 0805, 1000 pf, 100 v, 5%, avx c8 0505, 56 pf, 5%, 250 v, atc 0505, 36 pf, 5%, 250 v, atc c9 0505, 2.2 pf, 0.1 pf, 250 v, atc 0505, 3.0 pf, 0.1 pf, 250 v, atc c10 0505, 1.0 pf, 0.1 pf, 250 v, atc n/a c11 0505, 91 pf, 5%, 250 v, atc 0505, 36 pf, 5%, 250 v, atc c12 0805, 1000 pf, 100 v, 5%, avx 0805, 1000 pf, 100 v, 5%, avx c13 1210, 1 f, 100 v, 20%, atc 1210, 1 f, 100 v, 20%, atc r1 12 , 0805, 5% 12 , 0805, 5% r2 1.0 , 0603, 5% 1.0 , 0603, 5% r3 0.33 , 0603, 5% 1.0 , 0603, 5% l1 0603 cs, 1.6 nh (1.8 nh) n/a l2 0402 hp, 2.7 nh n/a l3 0402 hp, 2.7 nh n/a l4 0402 pa, 1.9 nh (0402 hp, 2.0 nh) n/a l5 0402 pa, 1.9 nh (0402 hp, 2.0 nh) n/a r f i n r f o u t v d v g g n d
gan wideband 90 w pulsed transistor in plastic package dc - 3.5 ghz rev. v3 magx - 000035 - 09000p 5 5 5 m/a - com technology solutions inc. (macom) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. visit www.macomtech.com for additional data sheets and product information. for further information and support please visit: https://www.macomtech.com/content/customersupport parts list parts measured on evaluation board (12 - mil thick ro4003c). electrical and thermal ground is provided using a copper - filled via hole array (not pictured), and evaluation board is mounted to a metal plate. matching is provided using lumped elements. recommended tuning solutions for 1 frequency range is detailed in the parts list below. evaluation board details and recommended tuning solutions (freq. = 2.7 - 3.5 ghz) turning the device on 1. set v g to the pinch - off (v p ), typically - 5 v. 2. turn on v d to nominal voltage (50 v). 3. increase v gs until the i ds current is reached. 4. apply rf power to desired level. turning the device off 1. turn the rf power off. 2. decrease v g down to v p. 3. decrease v d down to 0 v. 4. turn off v g . bias sequencing part value case style c1 0.7 pf 0402 c2, c3 1.1 pf 0402 c4, c5, c6, c7 2.0 pf 0402 c8, c9 100 pf 0402 c10, c11 6.8 pf 0402 c12, c13, c14, c15 1.3 pf 0402 c16, c17 0.3 pf 0402 c18 0.5 pf 0402 c19 12 pf 0603 c20, c21 100 pf 0603 c22 10 nf 0603 l1, l2, l3, l10, l11 1 nh 0402 l6, l7 12 nh 0402 l8, l9 12 nh 0603 l4, l5 2.2 nh 0402 r1, r2 200 0402 t1 magx - 000035 - 09000p 3x6 mm dfn
gan wideband 90 w pulsed transistor in plastic package dc - 3.5 ghz rev. v3 magx - 000035 - 09000p 6 6 6 m/a - com technology solutions inc. (macom) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. visit www.macomtech.com for additional data sheets and product information. for further information and support please visit: https://www.macomtech.com/content/customersupport handling procedures please observe the following precautions to avoid damage: static sensitivity gallium nitride devices and circuits are sensitive to electrostatic discharge (esd) and can be damaged by static electricity. proper esd control techniques should be used when handling these class 1b devices. lead - free 3x6 mm 14 - lead dfn ? ? reference application note s2083 for lead - free solder reflow recommendations. meets jedec moisture sensitivity level 1 requirements. plating is ni/pd/au.
gan wideband 90 w pulsed transistor in plastic package dc - 3.5 ghz rev. v3 magx - 000035 - 09000p 7 7 7 m/a - com technology solutions inc. (macom) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. visit www.macomtech.com for additional data sheets and product information. for further information and support please visit: https://www.macomtech.com/content/customersupport applications section s - parameter data: t a = 25c, v dd = +50 v, i dq = 200 ma 0 1.0 1.0 -1.0 10.0 10.0 -10.0 5.0 5.0 -5.0 2.0 2.0 -2.0 3.0 3.0 -3.0 4.0 4.0 -4.0 0.2 0.2 -0.2 0.4 0.4 -0.4 0.6 0.6 -0.6 0.8 0.8 -0.8 magx00035_09000p_50 swp max 6ghz swp min 0.03ghz 3.498 ghz r 0.0100016 x 0.102801 2.744 ghz r 0.0122033 x 0.065709 1.317 ghz r 0.0187621 x -0.0190197 3.495 ghz r 0.0271106 x 0.0203957 2.719 ghz r 0.0382451 x -0.0244909 1.308 ghz r 0.109445 x -0.165303 s(1,1) magx00035_09000p_50 s(2,2) magx00035_09000p_50 0.03 2.03 4.03 6 frequency (ghz) spar graph -20 -10 0 10 20 30 40 1.973 ghz 21.76 db 2.714 ghz 15.49 db 3.504 ghz 14.5 db db(|s(2,1)|) magx00035_09000p_50 db(gmax()) magx00035_09000p_50 db(msg()) magx00035_09000p_50
gan wideband 90 w pulsed transistor in plastic package dc - 3.5 ghz rev. v3 magx - 000035 - 09000p 8 8 8 m/a - com technology solutions inc. (macom) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. visit www.macomtech.com for additional data sheets and product information. for further information and support please visit: https://www.macomtech.com/content/customersupport thermal performance: freq. = 1.6 ghz, t c = 85c, v dd = +50 v, i dq = 100 ma, z 0 = 50 junction temperature measured using high - speed transient (hst) temperature detection microscopy. applications section power (output & dissipated) vs. transient junction temperature, pulse duration and duty cycle pulse width, duty cycle 100 s, 10% 100 s, 20% 300 s, 10% 300 s, 20% 500 s, 10% 500 s, 20% 1000 s, 10% 1000 s, 20% 8000 s, 9.2% power dissipation (w) 55 55.4 54 55.9 54.3 56.2 53.5 57 58.2 1.6 ghz p out (w) 74.5 71.6 74 71.1 73.2 70.8 73.5 70 68.8 max. transient junction temp. (c) 116.3 143.4 131.0 158.2 137.6 164.0 146.0 173.4 169.4 50 60 70 80 90 100 90 110 130 150 170 190 power dissipation 1.6 ghz power output max .transient junction temp. pulse width (s), duty cycle (%)
gan wideband 90 w pulsed transistor in plastic package dc - 3.5 ghz rev. v3 magx - 000035 - 09000p 9 9 9 m/a - com technology solutions inc. (macom) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. visit www.macomtech.com for additional data sheets and product information. for further information and support please visit: https://www.macomtech.com/content/customersupport applications section 1.2 - 1.4 ghz, 3 ms pulse, 10% duty cycle, v dd = +50 v, t a = 25c, z 0 = 50 typical performance curves ( reference 1.2 - 1.4 ghz parts list ): pae vs. input power gain vs. input power output power vs. input power 0 20 40 60 80 100 0.0 0.5 1.0 1.5 2.0 1.2 ghz 1.3 ghz 1.4 ghz input power (w) 20 30 40 50 60 70 0.0 0.5 1.0 1.5 2.0 1.2 ghz 1.3 ghz 1.4 ghz input power (w) 12 14 16 18 20 22 0.0 0.5 1.0 1.5 2.0 1.2 ghz 1.3 ghz 1.4 ghz input power (w)
gan wideband 90 w pulsed transistor in plastic package dc - 3.5 ghz rev. v3 magx - 000035 - 09000p 10 10 10 m/a - com technology solutions inc. (macom) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. visit www.macomtech.com for additional data sheets and product information. for further information and support please visit: https://www.macomtech.com/content/customersupport applications section 1.6 ghz, 1 ms pulse, 10% duty cycle, v dd = +50 v, t a = 25c, z 0 = 50 pae vs. input power gain vs. input power output power vs. input power typical performance curves ( reference 1.6 ghz parts list ): 10 20 30 40 50 60 0.0 0.5 1.0 1.5 2.0 2.5 input power (w) 0 20 40 60 80 100 0.0 0.5 1.0 1.5 2.0 2.5 input power (w) 12 14 16 18 20 22 0.0 0.5 1.0 1.5 2.0 2.5 input power (w)
gan wideband 90 w pulsed transistor in plastic package dc - 3.5 ghz rev. v3 magx - 000035 - 09000p 11 11 11 m/a - com technology solutions inc. (macom) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. visit www.macomtech.com for additional data sheets and product information. for further information and support please visit: https://www.macomtech.com/content/customersupport applications section 2.7 - 3.1 ghz, 1 ms pulse, 10% duty cycle, v dd = +50 v, t a = 25c, z 0 = 50 typical performance curves ( reference 2.7 - 3.1 ghz parts list ): pae vs. frequency gain vs. frequency output power vs. frequency 6 8 10 12 14 2.6 2.7 2.8 2.9 3.0 3.1 3.2 3.3 3.4 3.5 frequency (ghz) 40 60 80 100 120 2.6 2.7 2.8 2.9 3.0 3.1 3.2 3.3 3.4 3.5 frequency (ghz) 30 40 50 60 70 2.6 2.7 2.8 2.9 3.0 3.1 3.2 3.3 3.4 3.5 frequency (ghz)

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